Synthesis of thin single-crystalline α-Cr-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition

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چکیده

Single-crystalline α-Cr 2 O 3 layers were synthesized on a sapphire substrate with basal orientation in laboratory reactor using ultrasonic-assisted chemical vapor deposition the temperature range of 700-850 o C. The influence growth structural quality layer was studied by X-ray diffraction. At 800 C, continuous thickness about 1 μm obtained. transparent visible region slightly greenish tint and showed some light transmission up to wavelengths ~ 350 nm. full width at half maximum rocking curve for reflection 0006 300 arcsec. Keywords: chromium oxide, CVD epitaxy, wide-bandgap semiconductor.

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ژورنال

عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki

سال: 2023

ISSN: ['1726-7471', '0320-0116']

DOI: https://doi.org/10.21883/tpl.2023.05.56036.19549